Schottky effect at a metal‐polymer interface
نویسندگان
چکیده
منابع مشابه
Interface states and Schottky barrier formation at metal/GaAs junctions
We report results of x-ray photoemission and cathodoluminescence spectroscopies studies of interface formation at metal-GaAs junctions. The results are interpreted by using a microscopic model of metal-semiconductor interfaces. Our low-temperature measurements and analyses show the validity of Schottky'S phenomenological description, thereby suggesting that metalinduced gap states and native de...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1994
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.112678